【大手半導体】メモリー設計エンジニア、横浜勤務、年収〜１２００万
横浜市
正社員
800万円 - 1200万円
- 応募
- 求人を送信
- 求人を保存
Bullet points
半導体の大手企業にて様々なメモリー設計に貢献できる
英語希望の方は大歓迎！（希望でない方ももちろん応募可能です）
企業情報
- A major international semiconductor company; one of the largest in the world
- employs over 50,000 people throughout the world
- Japan's development location in Yokohama is around 50 people
職務内容
- Responsible for critical path design and analysis of memory (SRAM/DRAM/MRAM/RRAM/PCRAM and/or eFlash)
- key building block Design, including sensing, analog, high voltage, etc.
- Design verification
- Reliability qualification
理想の人材
- Bachelor degree or higher in engineering
- Experience with SRAM/DRAM/MRAM/RRAM/PCRAM and/or eFlash
- Familiar with certain topics such as: bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis and more
- English: Read/Writing Level (however many chances to speak, too if interested!)
- Japanese: Fluent-level (JLPT N1 or higher)
条件・待遇
- Full time Employment
- Salary: Up to 12 Million Yen (depending on experience)
- Yokohama Location
- Bonus System: Yes
- Paid Vacation: Yes
- Social Insurance: Yes
- National Pension: Yes
- Work Insurance: Yes